Evaluating the hydrogenation reaction of grain boundaries in multicrystyalline silicon through in-situ photoluminescence mapping




Hydrogen is known to interact with defects and impurities in silicon (Si), passivate dangling bonds and reduce their recombination activities. Hydrogen passivation is particularly important for multicrystalline silicon (mc-Si) solar cells, as mc-Si material inherently contains extended crystal defects and also has relatively high metal impurity concentrations. Despite the benefit of hydrogen in mc-Si is well recognised, the underlying mechanism of bulk hydrogenation in mc-Si is less clear. This work will apply a micro-photoluminescence (PL) spectroscopy system with a temperature-controlled stage to monitor in situ changes in the recombination behaviour of selected grain boundaries during the hydrogenation process, in order to gain additional insight into the physical nature of the hydrogenation reaction. The study will involve performing photoluminescence measurement, and apply mathematical modelling to evaluate the kinetic of hydrogen passivation on grain boundaries in mc-Si materials. The student will learn about fundamental operation principle of solar cells, how to operate advanced characterisation tools, and perform complex data analysis.

Fundamental knowledge of semiconductor physics is preferred.

Starting date is flexible. 

If you're interested in this project or would like to know more details about the project, please email me at kelvin.sio@anu.edu.au


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