Dr Kelvin Sio

Hang Sio
Research Fellow
Research Area:
PhD

Kelvin Sio received his PhD degree in Engineering in 2016 from the Australian National University. Since then, he is working as a researcher fellow.

My research interest lies in the field of solar photovoltaic, particularly in multicrystalline silicon, with the objective to improve the material quality of multicrystalline silicon so that solar cells made from multicrystalline silicon can reach higher efficiency. My research focuses on characterising various carrier recombination mechanisms in multicrystalline silicon materials using advanced characterisation techniques, and developing methods to reduce their detrimental impacts to the final cell performance.

H. C. Sio., S. P. Phang, H. T. Nguyen, Z. Hameiri and D. Macdonald, “Hydrogenation in multicrystalline silicon: the impact of dielectric film properties and firing conditions,” Progress in Photovoltaics: Research and Applications.

H. C. Sio, S. P. Phang, A. Fell, et al., “The electrical properties of high performance multicrystalline silicon and mono-like silicon: Material limitations and cell potential,” Solar Energy Materials and Solar Cells. 201 (2019), p. 110059.

H. C. Sio, A. Fell, S. P. Phang, et al., “3-D Modeling of Multicrystalline Silicon Materials and Solar Cells,” IEEE Journal of Photovoltaics, 9 (2019), pp. 956-973.

A. Liu, C. Sun, H. C. Sio, X. Zhang, H. Jin, and D. Macdonald, “Gettering of transition metals in high-performance multicrystalline silicon by silicon nitride films and phosphorus diffusion, ” Journal of Applied Physics 125 (2019).

H. C. Sio, H. Wang, Q. Wang, C. Sun, W. Chen, H. Jin, and D. Macdonald, “Light and elevated temperature induced degradation in p-type and n-type cast-grown multicrystalline and mono-like silicon,” Solar Energy Materials and Solar Cells. 182 (2018), pp. 98-104.

H. C. Sio, S. P. Phang, P. Zheng, Q. Wang, W. Chen, H. Jin, and D. Macdonald, "Recombination sources in p-type high performance multicrystalline silicon," Japanese Journal of Applied Physics, 56 (2017).

S. P. Phang, H. C. Sio, C. F. Yang, C. W. Lan, Y. M. Yang, A. Yu, B. Hsu, C. Hsu and D. Macdonald, "N-type high-performance multicrystalline and mono-like silicon wafers with lifetimes above 2ms," Japanese Journal of Applied Physics, 56 (2017).

C. Sun, H. T. Nguyen, H. C. Sio, F. E. Rougieux and D. Macdonald, "Activation Kinetics of the Boron-Oxygen defect in Compensated n- and p-type Silicon Studied by High-injection Micro-photoluminescence," IEEE Journal of Photovoltaics, 7 (2017), pp. 988-995.

H. T. Nguyen, M. A. Jensen, L. Li, C. Samundsett, H. C. Sio, B. Lai, T. Buonassisi and D. Macdonald, "Microscopic Distributions of Defect Luminescence From Subgrain Boundaries in Multicrystalline Silicon Wafers," IEEE Journal of Photovoltaics, 7 (2017), pp. 772-780.

H. C. Sio, S. P. Phang, and D. Macdonald, "Imaging surface recombination velocities of grain boundaries in multicrystalline silicon wafers via photoluminescence," Solar RRL, 1 (2017), p. 1600014.

V. A. Oliveira, B. Marie, C. Cayron, M. Marinova, M. G. Tsoutsouva, H. C. Sio, T.A. Lafford, J. Baruchel, G. Audoit, A. Grenier, T. N. Tran Thi, D. Camel, “Formation mechanism and properties of twinned structures in (111) seeded directionally solidified solar grade silicon,” Acta Materialia, 121 (2016), pp. 24-36.

J. Bullock, D. Kiriya, N. Grant, A. Azcatl, M. Hettick, T. Kho, P. Phang, H. C. Sio, D. Yan, D. Macdonald, M. A. Quevedo-Lopez, R. M. Wallace, A. Cuevas, and A. Javey, “Superacid Passivation of Crystalline Silicon Surfaces,” ACS Applied Materials & Interfaces, 8 (2016), pp. 24205-24211.

H. C. Sio, T. K. Chong, S. Surve, K. Weber, and D. Macdonald, "Characterizing the Influence of Crystal Orientation on Surface Recombination in Silicon Wafers," IEEE Journal of Photovoltaics, 6 (2016), pp. 412-418.

S. P. Phang, H. C. Sio, and D. Macdonald, "Applications of carrier de-smearing of photoluminescence images on silicon wafers," Progress in Photovoltaics: Research and Applications, 24 (2016), pp. 1547-1553.

H. C. Sio and D. Macdonald, "Direct comparison of the electrical properties of multicrystalline silicon materials for solar cells: conventional p-type, n-type and high performance p-type," Solar Energy Materials and Solar Cells, 144 (2016), pp. 339-346.

H. C. Sio, S. P. Phang, T. Trupke, and D. Macdonald, "Impact of Phosphorous Gettering and Hydrogenation on the Surface Recombination Velocity of Grain Boundaries in p-Type Multicrystalline Silicon," IEEE Journal of Photovoltaics, 5 (2015), pp. 1357-1365.

H. C. Sio, T. Trupke, and D. Macdonald, "Quantifying carrier recombination at grain boundaries in multicrystalline silicon wafers through photoluminescence imaging," Journal of Applied Physics, 116 (2014), p. 244905.

H. C. Sio, S. P. Phang, T. Trupke, and D. Macdonald, "An accurate method for calibrating photoluminescence-based lifetime images on multi-crystalline silicon wafers," Solar Energy Materials and Solar Cells, 131 (2014), pp. 77-84.

S. P. Phang, H. C. Sio, and D. Macdonald, "Carrier de-smearing of photoluminescence images on silicon wafers using the continuity equation," Applied Physics Letters, 103 (2013), p. 192112.

H. C. Sio, Z. Xiong, T. Trupke, and D. Macdonald, "Imaging crystal orientations in multicrystalline silicon wafers via photoluminescence," Applied Physics Letters, 101 (2012), p. 082102.

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